Theoretical studies of spin-dependent electrical transport through carbon nanotubes
نویسندگان
چکیده
منابع مشابه
Theoretical studies of spin-dependent electrical transport through carbon nanotbes
Spin-dependent coherent quantum transport through carbon nanotubes (CNT) is studied theoretically within a tight-binding model and the Green’s function partitioning technique. End-contacted metal/nanotube/metal systems are modelled and next studied in the magnetic context, i.e. either with ferromagnetic electrodes or at external magnetic fields. The former case shows that quite a substantial gi...
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Carbon nanotubes (CNT) belong to the most promising new materials which can in the near future revolutionize the conventional electronics. When sandwiched between ferromagnetic electrodes, the CNT behaves like a spacer in conventional spin-valves, leading quite often to a considerable giant magneto-resistance effect (GMR). This paper is devoted to reviewing some topics related to electron corre...
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We study theoretically non-local spin-transport in a ballistic carbon nanotube contacted to two ferromagnetic leads and two normal metal leads. When the magnetizations of the two ferromagnets are changed from a parallel to an antiparallel configuration, the circuit shows an hysteretic behavior which is specific to the few-channels regime. In the coherent limit, the amplitude of the magnetic sig...
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The transport of methane molecules into several open-ended carbon nanotubes is studied with classical, nonequilibrium molecular dynamics simulations. The forces in the simulations are determined using a reactive empirical bond order potential for short-ranged interactions and a Lennard-Jones potential for long-range interactions. The simulations show that until the carbon nanotubes are filled w...
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We review recent progress in the measurement and understanding of the electrical properties of individual metal and semiconducting single-wall carbon nanotubes. The fundamental scattering mechanisms governing the electrical transport in nanotubes are discussed, along with the properties of p–n and Schottkybarrier junctions in semiconductor tubes. The use of advanced nanotube devices for electro...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2006
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/21/11/s12